| 摘要 |
<p>PURPOSE:To decrease the number of processes and to improve throughput by forming a third intensity transmittance distribution with a distribution of the distances at which exposing light passes in an exposing light absorption region. CONSTITUTION:An absorption film 12 is formed by laminating a thin film of silicon dioxide on a quartz glass substrate 11 and further, a light shielding film 13 is formed on the quartz glass substrate 11 and the absorption film 12. Further, level differences are formed on the absorption film 12 and the distribution of the distances at which the quartz glass substrate 11 passes the absorption film 12 exist within the plane of the photomask. The exposing light is completely shut off and, therefore, the intensity transmittance is 0% and the light intensity is zero as well in the light shielding region where the light shielding film 13 is formed. The concn. of the boron ions incorporated into the absorption film 12 is constant throughout the film and the absorption quantity is determined by the distances at which the exposing light passes the absorption film 12. Since the intensity transmittance distribution is formed by the film thickness distribution of the absorption film 12, the intensity transmittance is reduced to 1/4 by doubling the film thickness of the absorption film 12.</p> |
