| 摘要 |
<p>PURPOSE:To provide a polarized electron beam generating element by which a polarized electron beam having a sufficient high polarization rate can be obtained. CONSTITUTION:In this polarized electron beam generating element 10, a difference ¦x-y¦ in a mixed crystal ratio between a GaAs1-xPx compound semiconductor layer 14 and a GaAs1-yPy compound semiconductor layer 16 and a thickness (t) of the GaAs1-yPy compound layer 16 are determined according to a difference in a grating constant to the GaAs l-xPx compound semiconductor layer 14 so that residual strain epsilonR formed in the GaAs s-yPy compound semiconductor layer 16 becomes equal to or larger than 2.0X10<-3> Thereby, since the magnitude DELTAE of degeneration separation in a valence band in the GaAs1-yPy compound semiconductor layer 16 becomes equal to or larger than 13meV, a polarization rate of at least 50% or more can be obtained.</p> |
