| 摘要 |
<p>PURPOSE:To keep a specific resistance low at areas other than a self-oxidized part by injecting an impurity element between lattices for a metal layer and then self-oxidizing the metal layer. CONSTITUTION:An Nb layer 21 with a body-centered cubic lattice structure is deposited on a glass substrate 10. A nitrogen non-doped alpha-Ta layer 22 is formed. A gate electrode wiring pattern is provided on it before etching, thus patterning the Nb layer 21 and the nitrogen non-doped alpha-Ta layer 22 in the shape of a gate electrode wiring 20 with a gate electrode 20a. N is implanted into the surfaces of the nitrogen non-doped alpha-Ta layer 22 which is formed on the Nb layer 21 and the Nb layer. The surfaces of the alpha-Ta layer 22 and the Nb layer 21 are anodized, thus forming a first insulation film 23 covering the entire Nb layer 21 and alpha-Ta layer 22. Therefore, a gate electrode wiring 20 where the insulation film 23 is formed due to self-oxidation is formed. Nitrogen is implanted into only a part near the insulation film 23, thus preventing a specific resistance from increasing.</p> |
