| 摘要 |
(A) immersing a BPSG layer (3); (B) immersing a PSG layer (5) and the 1st nitride layer (12) sequentially; (C) forming a window on the 1st nitride layer (12) by removing the fixed region of a photoresist film (6d); (D) immersing the 2nd nitride layer (15) to wrap round the PSG (5) and the 1st nitride layer (12); (E) forming nitride spacer (16) to wrap round the side face of PSG layer (5) by the anisotrpic etching of the 2nd nitride layer (15) through the RIE method; (F) immersing the 2nd nitride layer (15) to wrap round the side face of PSG layer (5) after exposing the oxide insulating layer (1); (G) forming a nitride spacer (16) to wrap round the fuse (2) and the side face of BPSG layer (3), PSG layer (5), the 1st nitride layer (12), and the 2nd nitride layer (15), and to expose the fixed area of the oxide insulating layer (1); and (H) immersing a polyimide film (10) for protecting the semiconductor device from soft errors, spreading the photoresist film (6e) over the above layer (10) and connecting a polyimide film (10) with the oxide insulating layer (1).
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