Adjustment of the processing rate distribution in an etching or plasma CVD installation - with an adjustment body located opposite to the surface undergoing processing

摘要

Adjusting the processing rate distribution along a surface, which is to be coated or etched with the aid of an AC-plasma, is characterised by the following: (a) the surface (9o) of an adjustment body (9) is placed opposite to the surface (3o) undergoing processing, with the body (9) essentially surrounded from all sides by the plasma discharge space (PL); (b) the processing rate distribution is determined by the material and/or the surface state of the body (9) and/or its distance relation to the surface (3o). USE/ADVANTAGE - Process is used in the mfr. of semiconductor devices. Adjustment of the processing rate distribution on surfaces is simplified and made more flexible.