NAND-type volatile DRAM matrix - comprises MOSFET-capacitor cells and static storage register groups for temporarily storing data for re-writing-in or reading-out data from cells for each column of matrix

摘要

The storage capacitors of the matrix cells are coupled to each MOSFET source. Register groups (40) for each memory cell temporarily store the signals stored in a single memory cell for each matrix column, read out data from each memory cell, or write the data into them. Pref. each memory cell has a NAND structure. Each register group typically has a static memory cell structure. At least a part of the register groups is used in common by several memory cell matrices. Additionally there are several address intermediate memory circuits, storing addresses for address bits of the memory cell matrix. ADVANTAGE - Reduced time for data read-out and rewriting, and reduced data access time.