| 摘要 |
<p>The present invention relates to an integrated circuit capacitor of CMOS type, this circuit comprising a substrate with a first type of conductivity (3) in which wells with the second type of conductivity are formed, part of which is surmounted by an insulated gate. This capacitor is formed in two identical wells (31, 41) surmounted by identical gates (32, 42). Each well comprises a region of the second type of conductivity (33, 43) with a high level of doping extending substantially between the projection of the gate and the vicinity of the periphery of the well. Each gate of a well is connected to the region of the other well with the second type of conductivity and constitutes an electrode of the capacitor. <IMAGE></p> |
