| 摘要 |
The present invention relates to a method for testing sheet resistivity of diffused layers consisting in associating with each set of wafers undergoing doping and diffusion treatment at least one specimen plate (11) subjected to the same treatment, and in taking measurements under a probe of resistance of the diffused layer in a plurality of regions of each specimen wafer. Before each doping and diffusion operation, a window is opened in each of the measurement regions of the specimen wafer so that the doping/diffusion takes place only in a portion of the region where the measurement is then performed. <IMAGE> |
