Molecular beam epitaxy (MBE) effusion source utilizing heaters to achieve temperature gradients.

摘要

An effusion source, for the generation of molecular beams, adapted to be positioned at an angle to the horizontal, within a vacuum chamber, of a Molecular Beam Epitaxy (MBE) system including heating structures around the source to create uniform temperatures across the source in planes substantially parallel to the horizontal to cause uniform temperatures in planes substantially parallel to the horizontal in materials placed within the source and intended for MBE applications. A number of heating embodiments are described.