发明名称 Semiconductor device containing voltage converting circuit and operating method thereof
摘要 The semiconductor memory device contains a voltage converting circuit. The voltage converting circuit includes a plurality of reference voltage generating circuits for respectively generating a plurality of reference voltages at different levels. The voltage converting circuit further includes a differential amplifier, an output circuit, a switching circuit and a switching control circuit. The switching control circuit and the switching circuit select one of the plurality of reference voltages and supply the selected reference voltage to the differential amplifier in response to an externally applied control signal. The differential amplifier and the output circuit apply the supplied reference voltage to an internal circuit.
申请公布号 US5283762(A) 申请公布日期 1994.02.01
申请号 US19910695028 申请日期 1991.05.06
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 FUJISHIMA, KAZUYASU
分类号 G05F1/46;G05F3/24;G11C5/14;H03F3/45;(IPC1-7):G11C13/00 主分类号 G05F1/46
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