发明名称 |
Electron beam writing system used in a cell projection method |
摘要 |
An electron beam writing system is used in variable shaping and cell projection methods to produce LSI and reticles. In the cell projection method, the beam is deflected to define a writing position. In the time it takes to define the writing position, an operation of forming the beam is concluded, which operation includes the deflection of the beam to select a cell graphic, re-deflection for correcting the origin position of the written graphic, astigmatism correction of the written graphic, and focus correction for reducing the Coulomb effect. An electrostatic deflector is used as the deflector for the cell graphic selection. The arrangement of graphics includes a square aperture centrally located with a group of cell projection apertures positioned adjacent two sides of the square aperture.
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申请公布号 |
US5283440(A) |
申请公布日期 |
1994.02.01 |
申请号 |
US19910770527 |
申请日期 |
1991.10.03 |
申请人 |
HITACHI, LTD. |
发明人 |
SOHDA, YASUNARI;TODOKORO, HIDEO;SAITOU, NORIO;YODA, HARUO;ITOH, HIROYUKI;SHINADA, HIROYUKI;NAKAYAMA, YOSHINORI;OKAZAKI, SHINJI |
分类号 |
H01J37/317;(IPC1-7):H01J37/30 |
主分类号 |
H01J37/317 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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