发明名称 Plasma processing method and apparatus
摘要 A plasma process and an apparatus therefor are described. A number of substrates are disposed between a pair of electrodes, to which a high frequency electric power is applied in order to generate glow discharge and induce a plasma. The substrates in the plasma are applied with an alternating electric field. By virtue of the alternating electric field, the substrates are subjected to sputtering action.
申请公布号 US5283087(A) 申请公布日期 1994.02.01
申请号 US19920863543 申请日期 1992.04.06
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI, SHUNPEI;TSUCHIYA, MITSUNORI;KAWANO, ATSUSHI;IMATOU, SHINJI;NAKASHITA, KAZUHISA;HAMATANI, TOSHIJI;INUSHIMA, TAKASHI;ITOU, KENJI
分类号 C23C16/517;H01J37/32;H01J37/34;(IPC1-7):B05D3/06;C23C16/00;C25F3/00 主分类号 C23C16/517
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