发明名称 |
INTRODUCTION OF IMPURITY ATOM |
摘要 |
PURPOSE:To provide a method of introducing impurity atoms into diamond or BN or SiC or organic semiconductor. CONSTITUTION:Impurity particles are accelerated, energized and are applied to diamond or BN or SiC or organic semiconductor material. Diamond or BN or SiC or the organic semiconductor material is exposed to the atmosphere that contains hydrogen radicals or hydrogen ions after irradiated with the accelerated particles. |
申请公布号 |
JPH0620982(A) |
申请公布日期 |
1994.01.28 |
申请号 |
JP19910256821 |
申请日期 |
1991.10.04 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD;OSAKA DIAMOND IND CO LTD |
发明人 |
HIRAKI AKIO;MORI YUSUKE;HIRAO TAKASHI;KITAHATA MAKOTO;DEGUCHI MASAHIRO;NISHIMURA KAZUHITO |
分类号 |
C01B21/064;C01B31/06;C23C8/36;C30B29/04;C30B29/36;C30B29/38;C30B31/22;H01L21/265;H01L51/00;H01L51/05;H01L51/40 |
主分类号 |
C01B21/064 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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