发明名称 SEMICONDUCTOR MEMORY DEVICE WITH FLASHLIGHT FUNCTION
摘要 <p>PURPOSE:To write color data in a column address in an arbitrary range on a selected word by designating the column address range of data write at the time of flashlight. CONSTITUTION:When (column address)=2 is given from the outside in the flashlight write start address designation state, a signal phi2 goes to the high level, and the other signals go to the low level. When a signal phiSTAT is changed to the high level, signals phi1 to phin are latched in latch circuits DL1 to DLn by its change edge, and only a nodal point N2 goes to the high level, and the other nodal points go to the low level. Next, when (column address)=n-1 is given in the write end address designation state, a signal phin-1 goes to the high level, and the other signals go to the low level, and nodal points N2 and Nn go to the high level, and the other nodal points go the low level. Thus, color data is written in column addresses between preliminarily designated flashlight write address 2 and end address n-1 at the time of flashlight, and preceding data is held in the other column addresses.</p>
申请公布号 JPH0620466(A) 申请公布日期 1994.01.28
申请号 JP19920196386 申请日期 1992.06.30
申请人 NEC CORP 发明人 KAMISAKI SACHIKO
分类号 G11C11/401;G11C16/02;G11C16/06;G11C17/00;(IPC1-7):G11C11/401 主分类号 G11C11/401
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