| 摘要 |
<p>PURPOSE:To improve uniformity of etching rate over the surface of a wafer, concerning a dry etching method which uses a dry etching device of such system as to fix a wafer mechanically by a clamp. CONSTITUTION:In the dry etching method which fixes a wafer on a stage 2 by pressing the periphery of the wafer 1 with the press pieces 1 of a clamp and etches the surface of the wafer in this condition, the surface of the wafer 1 is etched while supplying a part of reactive gas from the gas introduction path 2a provided in the stage 2 to the rear side of the wafer 1, and turning this about to the vicinity of the press piece 3 on the surface side.</p> |
