| 摘要 |
PURPOSE:To provide a thin-film transistor of uniform characteristics without degradation of its gate film by superposing thin channel polysilicon films. CONSTITUTION:A silicon oxide film 102 is formed to cover the entire surface of a semiconductor substrate 101. After amorphous silicon or polysilicon is deposited, the gate electrode 103 of a transistor is formed by ion implantation, and a silicon oxide film 104 is formed for a gate oxide film. An amorphous silicon film or polysilicon film 105 is formed, and a polysilicon film 106 is formed on it. Source and drain regions and a channel region are formed by ion implantation using a resist mask. According to this method, a uniform grain size and a long grain boundary are achieved, so it is possible to obtain a thin-film transistor of uniform characteristics without degradation of its gate film. |
