| 摘要 |
PURPOSE:To provide a stable semiconductor memory by forming a contact window with a silicon substrate in a self-alignment manner. CONSTITUTION:A gate oxide film, a polysilicon film and a silicon oxide film are grown on a semiconductor substrate, then patterned, a sidewall of a silicon oxide film is formed on a sidewall, and a MOS transistor is formed. Then, a polysilicon film, a tungsten silicide and a silicon oxide film 31 are sequentially laminated, then patterned, a sidewall 32 is formed, and a bit string is formed. Thereafter, a contact window 33 is formed on a region surrounded by two MOS transistors and two bit strings in a self-alignment manner. Then, a capacity insulating film, a plate electrode, a BPSG film, aluminum wirings and a surface protective film are sequentially formed. |
