| 摘要 |
PURPOSE:To eliminate the alignment of a complicated semiconductor light emitting element or an optical component, etc., by a method wherein the end of an optical waveguide is exposed by an etching step, etc., to directly form a light emitting element on the exposed part so that the light emitted from a polycrystalline semiconductor light emitting element may be coupled with the optical waveguide. CONSTITUTION:A GeO added SiO2 film 2 is formed on a quartz glass substrate 1. Next, a rib-type optical waveguide 3 is formed by etching step. Next, a polycrystalline AlGaAs film 4 is formed on the substrate 1. Successively, a polycrystalline p-type AlGaAs film 4a, a polycrystalline n-type AlGaAs film 4b are grown to remove the grown up polycrystalline AlGaAs film 4 using an etchant. Furthermore, a stepped part to form a p-type electrode is made using the etchant to form the p-type electrode 6 in this region. Next, an n-type electrode 7 is evaporated on the extension line of the rib-type optical waveguide 3 to form a polycrystalline AlGaAs light emitting element 13. Through these procedures, the size of the light emitting electrode 13 can be diminished. |
