| 摘要 |
PURPOSE:To prevent recombination of photovoltaic carriers, to improve open voltage and carrier range of holes, and to improve the conversion efficiency when irradiating light is weak. CONSTITUTION:A p-type layer 105 formed of a silicon series non-single crystalline semiconductor material, a photoconductive layer (a layer formed of a plurality of i-type layers) and an n-type layer 102 are at least formed in multilayer. The photoconductive layer is formed of a multilayer structure having at least an i-type layer 104 deposited by a microwave plasma CVD method on the side of the layer 105, and an i-type layer 103 deposited by an RF plasma CVD method on the side of the layer 102. The layer 104 disposed by the microwave plasma CVD method contains at least silicon atoms and carbon atoms in such a manner that a position where the band gap is a minimum is at the i-type layer formed to be deviated toward a p-type layer from the center of the i-type layer. And, the layer 103 deposited by the RF plasma CVD method contains at least silicon atoms and has a thickness of 30nm or less. |
