| 摘要 |
<p>PURPOSE:To inhibit the breaking of a wire and inferior insulation in an active matrix substrate by carrying out flattening with an insulating protective film. CONSTITUTION:An oxidized insulating film 19 is laminated on a gate electrode 13 laminated on a glass substrate 11 and an insulating protective film 18 whose upper face is continuous with the upper face of the insulating film 19 is laminated on the substrate 11. A flat insulating film 21 is further laminated on the oxidized insulating film 19 and the insulating protective film 18, and a semiconductor layer 22, an etching stopper layer 23, a contact layer 24, a source electrode 15 and a drain electrode 16 are laminated on the insulating film 21.</p> |
