SEMICONDUCTOR MEMORY AND FABRICATION THEREOF,申请号JP19920178145-传众专利搜索

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发明名称	SEMICONDUCTOR MEMORY AND FABRICATION THEREOF
摘要
申请公布号	JPH0621472(A)	申请公布日期	1994.01.28
申请号	JP19920178145	申请日期	1992.07.06
申请人	SONY CORP	发明人	MAARI KOUICHI
分类号	H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L29/788	主分类号	H01L21/8247
代理机构		代理人
主权项
地址

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