| 摘要 |
<p>PURPOSE:To enlarge the temperature margin of the write characteristic of a memory cell by making the output of a write voltage setting circuit a positive temperature characteristic. CONSTITUTION:In the write voltage setting circuit PG, VPP is applied to a control signal line WR, and OV is applied to the control signal line BWR in a write mode. At this time, terms Vtn, Vtp changing according to temperature are contained in a nodal point voltage VPG 7, and the more these threshold values are reduced the more the temperature is raised usually. Thus, in the case of writing in the memory cell, the more the gate voltage VPGO11 of a write controlling FETQw1 is increased the more the temperature is raised. Then, though the current drive power of Qw1 is fluctuated according to the temperature in the write controlling FET Qw1 the temperature dependency of the value of a VD (write) is reduced than as usual by following up by the change of the gate voltage VDI.</p> |
