| 摘要 |
<p>PURPOSE:To control the high electrical power of a semiconductor power module while preventing it from being erroneously operated due to electric noise. CONSTITUTION:The circuit board 210 of the titled semiconductor power module is divided into two areas B1 and B2. Over the area B1 the main circuit of the module having IGBT elements T1-T6 is provided, while the control circuit which controls the main circuit is provided over the area B2. Namely, both the main circuit that controls high electrical power and that is a source of strong electric noise and the control circuit that might be erroneously operated due to the electric noise are provided over the same circuit board separately. Accordingly, the influence of the electric noise caused in the main circuit is reduced that is exerted on the control circuit, thereby preventing the control circuit from being erroneously operated due to the electric noise.</p> |
