| 摘要 |
PURPOSE:To obtain an LED array with excellent light emission distribution which can crease the optical output has a umform current density. CONSTITUTION:Within the title LED array, after the formation of an impurity region 13 in a GaAsP water 11, a transparent electrode as an outer leading output electrode (e.g. ITO) is evaporated on the whole surface so as to form the transparent electrode 15 by a photolithographic etching step. At this time, this transparent electrode 15 is to be formed as if covering the whole light emitting part 14. |
