发明名称 |
ALUMINUM NITRIDE SINTERED BODY AND SEMICONDUCTOR SUBSTRATE THEREOF |
摘要 |
This improved high heat conductive aluminium nitride sinter (1) consists of 95.5-99.8 wt.% (pref. 96.5-98.5 wt.%) of an AlN crystal particle phase and the remainder of a dysprosium (Dy) oxide phase. The average size of the AlN crystal particles is 2-10 (pref. 3-7) microns. The density of this AlN sinter has a value 99% or more (pref. 99.4% or more) of the theoretical density. 30 Wt.% or more (pref. 50 wt.% or more) of the oxide phase should exist at triple points formed by the AlN crystal particles. The heat conductivity at room temp. of (1) is 150 W/mK or more and the curving strength at room temp. is 30 Kg/mm2 or more (pref. 40 kg/mm2 or more). The semiconductor substrate is produced by forming an alumina-type aluminium oxide (2) layer on the surface of the AlN sinter (the thickness of the layer is 0.1-20 microns, pref. 0.5-3 microns). The alumina-type aluminium oxide (2) is composed of two phases, and alpha-Al2O3 phase and a solid soln. oxide of Dy and Al. The alumina-type oxide layer is formed by heating the AlN sinter at 950-1200 deg.C for 30 mins. in an atmos. where partial pressure of oxygen is 21% or less. Another semiconductor substrate is produced by forming a Ni and/or Cu layer (0.1-10 microns thickness) on a thin layer (100-8000 Angstroms) of Ni and/or Cu formed on the surface of the AlN sinter. |
申请公布号 |
KR940000729(B1) |
申请公布日期 |
1994.01.28 |
申请号 |
KR19880070388 |
申请日期 |
1987.08.13 |
申请人 |
HITACHI METALS LTD. |
发明人 |
IYORI, YUSUKE;FUKUSHIMA, HIDEKO |
分类号 |
C04B35/581;C04B41/50;C04B41/51;C04B41/52;H01L21/48;H01L23/15;(IPC1-7):C04B35/58 |
主分类号 |
C04B35/581 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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