SILICON LAYER PROVIDED WITH MAXIMIZED SURFACE AREA AND ITS MANUFACTURE

摘要

PURPOSE: To provide a silicon layer having maximal surface area which is used for a highly integrated semiconductor element and its manufacture. CONSTITUTION: A 1st insulating layer 1 and a 1st silicon layer 2 are formed on a silicon substrate 10 having a unit semiconductor element formed on it. After a 2nd insulating layer 3 is further formed on the 1st silicon layer 2, the 2nd insulating layer 3 is etched selectively to form a large number of holes in the 1st silicon layer 2, thereby granulating the surface of the 1st silicon layer 2. This silicon layer is used for a charge storage electrode of the semiconductor element.