| 摘要 |
<p>PURPOSE:To prevent the generation of dust from the transferred matter of marks for reticule inspection on a wafer and to improve the yield of LSIs. CONSTITUTION:A first silicide insulating layer 42 is provided on the surface of a silicon substrate 41 and a first silicide wiring layer 43 is deposited on this insulating film 42. The silicide wiring layer 43 is patterned by using the first reticule, by which the first mark 34 is formed. A second insulating film 44 is deposited on this mark 34 and the insulating film 42 and this insulating film 44 is patterned by using the second reticule, by which the second mark 35 existing on the mark 34 is formed. A second silicide wiring layer 46 is deposited within the mark 35 and on the second insulating film 44 and this silicide wiring layer 46 is patterned by using the third reticule, by which the deposit 37 for preventing dust and the third mark 36 are formed. Then, the yield of the LSIs is improved.</p> |
