| 摘要 |
<p>PURPOSE:To obtain the large-sized substrate for liquid crystal display by a transmission type active matrix system using single crystal semiconductor substrates. CONSTITUTION:The plural single crystal semiconductor films 3a, 3a',... serving as substrates for MOS transistors in a liquid crystal array part are joined via silicon oxide films 2 and are formed on a quartz substrate 1 as a transparent substrate. Gate parts are formed by polysilicons 5, 5',... on the respective single crystal semiconductor films 3a, 3a',... and are subjected to an activation annealing treatment by executing ion implantation; thereafter, the films are removed exclusive of the island parts forming the MOS TRs to form gate wires, source wires 8 and transparent electrodes 8, by which the MOS transistors are formed. The large-sized substrate for liquid crystal display by the transmission type active matrix system is formed by joining plural sheets of the single crystal semiconductor substrates having a limitation in size to the transparent substrate.</p> |
