| 摘要 |
<p>PURPOSE:To simultaneously accomplish excellent high temperature stability, resistance temperature characteristics and productivity using resistance thin film material consisting of a four-element alloy having specific ratio of component. CONSTITUTION:A quaternary alloy film, having the Cr-Ni ratio of 0.15 to 0.74, Al of 0.4 to 4.0wt.%, Si of 0.2 to 5.0wt.%, Al and Si of 1.5 to 8.0wt.% in total, is formed on an alumina substrate 2 using a vapor deposition method and the like, and a resistance thin film 3 is obtained. Then, the above-mentioned material is heat-treated at 300 to 700 deg.C for 1 to 20 hours in the atmosphere of oxygen concentration of 0.001 to 0.1ppm, and then another heat treatment is conducted at 200 to 500 deg.C for 1 to 10 hours in the atmosphere of oxygen concentration of 0.1 to 100ppm. Subsequently, an electrode film 4 is formed on the resistance thin film 3, the film 4 is coated with a photoresist film 5, and the resist on the part where an electrode part will be formed is removed by photoetching. Connection electrodes 8a and 8b are formed on the resist-removed part using a plating method. The resist film 5 is removed, electrode parts 4a and 4b are left by etching, and electrode parts 7a and 7b are formed on the resistance thin film 3.</p> |
