| 摘要 |
<p>PURPOSE:To enhance crystal uniformity of a grown thin film of HgCdTe when an infrared detector material is manufactured by the HgCdTe as a material by an MBE method. CONSTITUTION:An HgCdTe growing substrate 2 is fixed to a substrate holder 1 through a mirror surface thin plate 10 having the same size as that of the holder 1, and an HgCdTe thin film is grown on the substrate 2 by using an MBE method. Thus, adhesive properties of the substrate 2 are enhanced, and an irregularity in a temperature of the entire surface of the substrate 2 is eliminated. It is interrupted by the plate 10 during growing, HgCdTe is not deposited on the holder 1, reaction of the holder 1 with gallium is prevented, and a decrease in a substrate temperature due to an increase in radiational cooling can be prevented.</p> |
