发明名称 INTEGRATED CIRCUIT
摘要 PURPOSE:To fabricate an integrated circuit with the insulated base capacitane in a circuit element by forming in the first metal layer the conductive section insulated from the input node in correspondence with the input node and by equalizing a potential between the input node and the conductive section when using the output voltage from the high impedance circuit to drive the conductive section. CONSTITUTION:A metal layer 18 is deposited on the lower surface 16 of a base 12, while operational amplifiers 20 and 22 are formed on the upper surface of the base 12. The input node of the openational amplifier 20 in conjunction with a connecting pad 32 constitutes a trace route 34, while the input node of the operational amplifier 22 in conjunction with the connecting pad 32 constitutes the trace route 34. Further, conductive sections 36 and 38 are installed closely right under the connecting pad 32 and the trace route 34 and are insulated using the second silicon dioxide 28 from the input nodes. Furthermore, the conductive sections 36 and 38 are driven by the outputs from the operational amplifiers 20 and 22 via feedback lines 40 and 42, respectively. The openational amplifier 20 is a highimpedance voltage amplifier with a gain of 1 and is driven by an external signal from a voltage-dividing and attenuating circuit network 46.
申请公布号 JPH0621335(A) 申请公布日期 1994.01.28
申请号 JP19920291932 申请日期 1992.10.07
申请人 SONY TEKTRONIX CORP 发明人 MASHIYUU JIEE HADOUIN
分类号 H01L27/04;H01L21/822;H01L23/522;(IPC1-7):H01L27/04 主分类号 H01L27/04
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