发明名称 FORMING METHOD FOR RESIST PATTERN
摘要 PURPOSE:To improve a shape of a resist pattern to a rectangular shape from a tapered state without reducing a dissolving contrast as much as possible in an acid catalyst chemical amplifying system resist. CONSTITUTION:An acid catalyst series negative resist 105 is irradiated with a light 106, and the resist 105 of a part 106 irradiated with the light by a low temperature PEB process is formed to an insolubilized region 107 by the low temperature PEB process. An insolubilized region 108 by a high PEB process is formed on a boundary between the region 107 and the resist 105 which is not insolubilized. A resist pattern 109 formed in a rectangular shape of the regions 107 and 108 is obtained.
申请公布号 JPH0620937(A) 申请公布日期 1994.01.28
申请号 JP19920175122 申请日期 1992.07.02
申请人 NEC CORP 发明人 KASAMA KUNIHIKO
分类号 G03F7/38;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F7/38
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