| 摘要 |
PURPOSE: To provide a capacitor which requires neither a complex processor not an extra processing stage for maintaining an oxide-free electrode surface. CONSTITUTION: A capacitor 11 is formed on a dielectric layer 34. A conductive layer 36 is formed on the electric layer 34. An arbitrary barrier layer 16 is formed and electrically connected, and the conductive layer 36 is separated from a 1st electrode area 20 having a ruthenate part. A dielectric layer 22 is formed on the 1st ruthenate electrode area 20 to form a capacitor dielectric. A 2nd electrode region 24 is formed on the dielectric layer 22. An arbitrary barrier layer 28 is formed on the electrode region 24. A conductive layer 32 is formed on the arbitrary barrier layer 28 and brought into electric contact with the electrode region 24. A dielectric layer 30 is formed to electrically separate the capacitor 11. |
