| 摘要 |
PURPOSE:To form a node electrode of a sputter capacitor DRAM without using a silicon nitride film having various defects. CONSTITUTION:After a capacity contact 8 is opened at an interlayer film 7 made of a silicon oxide film or a boro-phosphosilicate glass film is opened, a polycrystalline silicon film 9 is formed as a node electrode, a phosphosilicate glass film 10 is formed, an unnecessary part is removed, and formed in a node electrode shape. A polycrystalline silicon film 11 is formed thereon, a phosphosilicate glass film 12 is further formed thereon, an unnecessary part is removed by anisotropically etching, and remains only on a sidewall. A polycrystalline silicon film 13 is formed thereon, unnecessary parts of the films 9, 11, 13 are removed by anisotropically etching, and the film 10, 12 are removed with solution containing hydrofluoric acid. Thus, a multiple cylindrical electrode is formed. |
