| 摘要 |
PURPOSE:To obtain the diode limiter not destroyed due to production of spike leakage electric power or absorption of high frequency electric power even when the thickness of an I layer is thick by applying a voltage less than a rising voltage with a forward polarity to a PIN diode. CONSTITUTION:A PIN diode 37 is connected in parallel to a waveguide 21 and a DC load voltage is applied to a lead terminal 40 connected via a resistor 41. Furthermore, a diode 42 connects to a connecting point A between the diode 37 and the resistor 41. The diode 42 has a lower rising voltage than that of the diode 37 and connected to the point A in the same direction as that of the diode 37. A capacitor 43 and a resistor 51 are connected to the connecting point A and the other terminal connects to a wall of a waveguide 21 in terms of DC. The resistor 51 acts as a path of the DC current when the diode 37 is self-excited. Through the constitution above, when a voltage less than the rising voltage is applied to the diode 37 in the forward polarity, since self-excited high frequency power is lowered, destruction is prevented even when the thickness of the I layer is thick. |
