| 摘要 |
PURPOSE:To provide a photoelectric conversion device which is improved to reduce dark current. CONSTITUTION:A first electrode 10 is provided on a substrate 1. A semiconductor 12 for photoelectric conversion is provided on the substrate 1 for covering the first electrode 10. A second electrode 14 is provided on the semiconductor 12. An electron injection block layer 13 for blocking injection of electron into the semiconductor 12 from the second electrode 14 is inserted between the semiconductor 12 and the second electrode 14. The electron injection block layer 13 is formed by a material satisfying the following inequality, namely phiM-chi2>=Eg1 when the work function of the second electrode 14 is set to phiM, the electron affinity of the electron injection block layer 13 is set to chi2, and the band gap of the semiconductor 12 is set to Eg1. |
