| 摘要 |
PURPOSE: To prevent depletion formation between Al metalization layers, forming a pattern continued with a polymer by forming a solid solution of binary alloy or ternary alloy containing Ge and Al, and depositing a deposit containing Ge at a temperature lower than the temperature of this formation. CONSTITUTION: A metalization layer 44 is formed on a dielectric layer 42 formed on a main face 41 of a substrate 40. The metalization layer 44 is patterned so as to provide mutual connection. On the layer 44, a solid solution is formed by adding Al containing Ge prior to Ge split-phase deposition. The surface of the layer 44 is a dielectric layer 46 composed of polymers, for example. The compound of metalization layers 44 and 54 and a stud 50 for applying a low ohmic contact between these layers can be formed through the simultaneous attachment of direct electronic beams by the interface mutually diffused of Ge to Al at a temperature from 300 deg.C to 400 deg.C. Since the volume is increased, the depletion formation between Al metalization layers can be prevented. |
