发明名称 END-POINT JUDGMENT METHOD OF LITHOGRAPHIC DEVELOPMENT
摘要 PURPOSE: To provide a method for judging the development end-point of resist, X-ray exposed by optically inspecting a test region at the time of resist development. CONSTITUTION: A test region 36 of the resist 20 is X-ray exposed through a mask 40, provided with an attenuator for attenuating an X-ray 50 at plural different levels in a test field 44. The pattern of the resist test region 36 is visually observed through a microscope during a development step. Since the positions of the test region 36 simultaneously receive different radiation amounts respectively, the pattern of the test region 36 changing, corresponding to development time is formed. When the changing pattern of the test region 36 matches with a known pattern related to a desired development end point, a work is excluded from the development step.
申请公布号 JPH0620939(A) 申请公布日期 1994.01.28
申请号 JP19930041211 申请日期 1993.03.02
申请人 INTERNATL BUSINESS MACH CORP <IBM> 发明人 RONARUDO ANSONII DERAGARUDEIA;JIYON RESUTAA MOOA ZA FUOOSU;DEBITSUDO AARU SHIIGAA
分类号 G03F7/26;G03F7/30;H01L21/027;H01L21/30;H01L21/66;(IPC1-7):H01L21/027 主分类号 G03F7/26
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