A semiconductor component including protection means.

摘要

A semiconductor component (1a) is formed by an insulated gate field effect device (2) having a semiconductor body (3) with a first region (4) of one conductivity type adjacent one major surface (3a), a second region (5) defining a conduction channel area (8) separating a third region (6) from the first region (4), an insulated gate (7) adjoining the conduction channel area (8) for controlling current flow between the first and third regions (4 and 6) and an injection region (10) for injecting opposite conductivity type charge carriers into the first region (4), and a protection device (11) for limiting the current through the insulated gate field effect device (2). The protection device (11) is formed by a fourth region (12) of the opposite conductivity type formed within the first region (4), a fifth region (13) separated from the first region (4) by the fourth region (12), a first conductive path (14) connecting the fifth region (12) to the insulated gate (7) for allowing the flow of one conductivity type charge carriers towards the insulated gate (7) and a second conductive path (15) connected to the fourth region (12). An area (12a) of the fourth region (12) beneath the fifth region (13) provides a route for opposite conductivity type charge carriers to the second conductive path (15) for causing, when the current through the insulated gate field effect device (2) exceeds a predetermined limit, the pn junction between the fourth (12) and first (4) regions to become forward biassed thereby causing the voltage at the insulated gate (7) to alter so as to limit the current through the insulated gate field effect device (2).