Light-emitting device of gallium nitride compound semiconductor.

摘要

Disclosed herein is a light-emitting diode of GaN compound semiconductor which emits a blue light from a plane rather than dots for improved luminous intensity. It has an electrode 80 for the high-carrier density n<+>-layer 3 and an electrode 70 for the high-impurity density iH-layer 52. These electrodes 70 (80) are made up a first Ni layer 71 (81) (100 ANGSTROM thick), a second Ni layer 72 (82) (1000 ANGSTROM thick), an Al layer 73 (83) (1500 ANGSTROM thick), a Ti layer 74 (84) (1000 ANGSTROM thick), and a third Ni layer 75 (85) (2500 ANGSTROM thick). The Ni layers of dual structure permit a buffer layer to be formed between them. This buffer layer prevents the Ni layer from peeling. The direct contact of the Ni layer with GaN lowers the drive voltage for light emission and increases the luminous intensity. <IMAGE>