发明名称 |
Groove structure for isolating elements comprising a GTO structure |
摘要 |
A semiconductor structure comprises a gate-turn-off thyristor region (GR) and a diode region (DR) with an isolation area (SR) therebetween. The isolation area is provided with a multistage groove (30) having step structures (34,35). The multistage groove is formed through a two-stage etching process, and over-etched regions in the bottom corners of the multistage groove are relatively shallow ones. This structure is effective for increasing the breakdown voltage of the semiconductor structure and isolations between a the gate-turnoff thyristor region and the diode region.
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申请公布号 |
US5281847(A) |
申请公布日期 |
1994.01.25 |
申请号 |
US19930008833 |
申请日期 |
1993.01.25 |
申请人 |
MITSUBISHI DENKI KABUSHIK KAISHA |
发明人 |
TOKUNOH, FUTOSHI |
分类号 |
H01L21/332;H01L21/764;H01L29/06;H01L29/74;(IPC1-7):H01L29/06;H01L31/111 |
主分类号 |
H01L21/332 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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