Compensated sense circuit for storage devices

摘要

The sense circuit recognizes the virgin or programmed status of cells in storage devices (e.g. non-volatile memories of the type with unbalanced loads), and includes a sense amplifier (SA) having a first input (Y) connected to a number of selectable virgin reference cells (Tvr1, Tvr2) and a second input (X) connected to a number of selectable matrix cells (Tvm, Tpm). According to the invention, the current path of a compensatory programmed cell (NP) is connected between a reference voltage and the first input (Y) of the sense amplifier (SA), with the gate of the compensatory programmed cell being connected to a voltage source (Vs) which selects the compensatory programmed cell at least while the sense amplifier reads a selected matrix cell.