发明名称 |
Semiconductor laser device |
摘要 |
A semiconductor laser device for radiating a laser beam from a double heterostructure section in which injected carriers having an energy source of the laser beam are confined consists of a compound semiconductor substrate with a prescribed lattice constant for loading the double heterostructure section, a lattice mismatched active layer with a first lattice constant which is 0.5% to 2.0% larger than the lattice constant of the substrate in the double heterostructure section for radiating the laser beam, a lattice mismatched cladding layer with a second lattice constant which is 0.2% to 2.0% smaller than the lattice constant of the substrate for confining the injected carriers in the active layer, and a cladding layer for confining the injected carriers in the active layer by co-operating with the lattice mismatched cladding layer.
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申请公布号 |
US5282218(A) |
申请公布日期 |
1994.01.25 |
申请号 |
US19920896536 |
申请日期 |
1992.06.09 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
OKAJIMA, MASAKI;NITTA, KOICHI;HATAKOSHI, GENICHI;NISHIKAWA, YUKIE;ITAYA, KAZUHIKO |
分类号 |
H01S5/00;H01S5/223;H01S5/32;H01S5/323;(IPC1-7):H01S3/19 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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