| 摘要 |
PCT No. PCT/FR90/00736 Sec. 371 Date Apr. 9, 1992 Sec. 102(e) Date Apr. 9, 1992 PCT Filed Oct. 15, 1990 PCT Pub. No. WO91/06125 PCT Pub. Date May 2, 1991.The invention relates to sensors having field effect semiconductors. The sensor of the invention comprises a ring oscillator constituted by an odd number of CMOS inverters disposed in a zone sensitive to the physical property to be measured. In order to increase the sensitivity of the sensor, the N channel of the NMOS transistor in each CMOS inverter is disposed perpendicularly to the P channel of the PMOS transistor.
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