Group III-V compound crystal article using selective epitaxial growth

摘要

A III-V group compound crystal article comprises a substrate having a non-nucleation surface with smaller nucleation density (SNDS) and a nucleation surface (SNDL) which is arranged adjacent to said non-nucleation surface (SNDS), has a sufficiently small area for a crystal to grow only from a single nucleus and a larger nucleation density (NDL) than the nucleation density (NDS) of said non-nucleation surface (SNDS) and is comprised of an amorphous material, and a III-V group compound monocrystal grown from said single nucleus on said substrate and spread on said non-nucleation surface (SNDS) beyond said nucleation surface (SNDL).