发明名称 |
Random access memory with redundancy repair circuit |
摘要 |
A random access memory includes a redundancy repair circuit having a plurality of parallel connected transistors and a plurality of fuses connected to respective drains of the plurality of transistors. An electrically resistive element is connected to a common node to reduce a difference in operating speeds between a first case in which the circuit is precharged from a state in which discharge to a low level was effected via one of the transistors and a case in which precharging of the circuit is effected from a state in which discharging was carried out via a plurality of the transistors. |
申请公布号 |
US5282165(A) |
申请公布日期 |
1994.01.25 |
申请号 |
US19910696944 |
申请日期 |
1991.05.08 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
MIYAKE, NAOMI;SUMI, TATSUMI |
分类号 |
G11C11/401;G11C29/00;G11C29/04;(IPC1-7):G11C7/00 |
主分类号 |
G11C11/401 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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