发明名称 Power MOSFET safe operating area current limiting device
摘要 An embodiment of the present invention is a switching power supply that includes a full-wave bridge rectifier to rectify incoming AC line voltage, a transformer having a primary winding and two secondary windings and a switched mode power supply chip that includes an integrated high voltage power MOSFET with a low voltage tap in the drift region. The MOSFET controls power switching of the primary winding of the transformer and has a high voltage present during initial power-up. This high voltage is dropped across the JFET part of the MOSFET and supplies a safe operating area protection circuit with a low voltage signal that will shut-off the MOSFET if the current passing through the MOSFET produces a voltage drop at the tap that exceeds a predetermined maximum.
申请公布号 US5282107(A) 申请公布日期 1994.01.25
申请号 US19920938705 申请日期 1992.09.01
申请人 POWER INTEGRATIONS, INC. 发明人 BALAKRISHNAN, BALU
分类号 H02M3/28;H02M3/335;H02M7/06;H02M7/12;H03K17/082;(IPC1-7):H02H7/122 主分类号 H02M3/28
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