| 摘要 |
PURPOSE: To enable output of a large output by constituting an optical voltage stack so as to form a collected junction a thin N<+> -layer formed on a high resistance P-type body with respect to an optical voltage stack having an LED and serially connected junction. CONSTITUTION: An optical voltage insulator has an optical voltage stack constituted of supporting a slab 351 having electrodes 352, 353 extended from a top electrode 345 and a bottom electrode 344 on a supporting base 350, and loads an LED 360 having electrodes 361, 362 onto a base 350. The LED 360 is arranged at a required interval from the stack, so as to obtain required insulation between the LED 360 itself and the stack. In this case, the optical voltage stack is formed by the vertical stack of plural identical monocrystal silicon chips. Each chip is formed by a P-type body provided with both thin ends, having 1st and 2nd planar and parallel faces and having a P<+> -diffusion layer and an N<+> - diffusion layer on the mutually opposite side faces, and respective chips are stacked with the same forward direction conductive polarity. |
