| 摘要 |
<p>PURPOSE: To obtain a surface light-emitting laser device, capable of reducing the resistance of a current passage and increasing an optical output. CONSTITUTION: In a surface light-emitting laser device, consisting of a semiconductor active region 20 arranged between a pair of reflector stacks 21, 22 having plural reflector layers extended in an axial direction and a pair of ohmic contacts 25, 26 for supplying a current to the region 20, at least one 22 of the stacks 21, 22 has a crossing wall 22A around the region 20 and a part 25A of the contact 25 surrounds the wall 22A.</p> |
