| 摘要 |
PURPOSE:To obtain the method of manufacturing a P. PGA type semiconductor device capable of using solder or a gold-silicon eutectic by a method wherein a pellet is fitted into a plate of which the surface is treated and which is made of ceramic or metal with the solder or gold-silicon eutectic, and this plate is fitted onto a sub strate. CONSTITUTION:After a pellet 1 is fitted onto a ceramic or metal plate 2 for fitting the pellet 1 thereon with adhesives such as gold-silicon eutectic, solder 3, or the like, the metal plate 2 or the ceramic plate are fitted onto the base 4 of plastic. Thus, as the metal plate is fitted onto the base before a pellet fitting plate or the metal plate is fitted thereon, the pellet can be fitted thereon at a high temparature and a semiconductor device having a low heat resistance can be realized.
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